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| Bulletin I0141J 01/01 S1232 PHASE CONTROL THYRISTORS Junction Size Wafer Size VRRM Class Passivation Process Reference IR Packaged Part : : : : : Square 250 mils - IR255SG12H/ S1232 4" 1200 V Glassivated MESA n. a. Major Ratings and Characteristics Parameters VTM Typical On-state Voltage Units 1.25 V 1200 V 5 to 80 mA 2V 5 to 100 mA 300 mA Test Conditions TJ = 25C, I T = 25 A TJ = 25C, I DRM/IRRM = 100 A (1) VDRM/VRRM Direct and Reverse Breakdown Voltage IGT VGT IH IL Required DC Gate Current to Trigger Max. Required DC Gate Voltage to Trigger Holding Current Range Maximum Latching Current TJ = 25 C, anode supply = 6 V, resistive load TJ = 25 C, anode supply = 6 V, resistive load Anode supply = 6 V, resistive load Anode supply = 6 V, resistive load (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 15 KA) Cr - Ni - Ag (1 KA - 4 KA - 15 KA) 250 x 250 mils (see drawing) 100 mm, with std. <110> flat 330 m 10 m 130 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 S1232 Bulletin I0141J 01/01 Outline Table All dimensions are in millimiters Wafer Layout TOP VIEW N 148 Basic Cells All dimensions are in millimiters 2 www.irf.com |
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